Method of forming a semiconductor device having asymmetric...

Details Method of forming a semiconductor device having asymmetric... Method of forming a semiconductor device having asymmetric...

2007-10-16

2007-10-16

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S528000, C438S981000, C257SE21625

Reexamination Certificate

active

11092289

ABSTRACT:
A method for forming a semiconductor device including forming a semiconductor substrate; forming a gate electrode over the semiconductor substrate having a first side and a second side, and forming a gate dielectric under the gate electrode. The gate dielectric has a first area under the gate electrode and adjacent the first side of the gate electrode, a second area under the gate electrode and adjacent the second side of the gate electrode, and a third area under the gate electrode that is between the first area and the second area, wherein the first area is thinner than the second area, and the third area is thinner than the first area and is thinner than the second area.

REFERENCES:
patent: 6127248 (2000-10-01), Kim
patent: 6352885 (2002-03-01), Wieczorek et al.
patent: 6713333 (2004-03-01), Mayuzumi
patent: 6746924 (2004-06-01), Lee et al.
patent: 6806584 (2004-10-01), Fung et al.
Filed Jun. 30, 2004 as U.S. Appl. No. 10/909,095.

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