Method of forming a semiconductor device having air gaps and...

Details Method of forming a semiconductor device having air gaps and... Method of forming a semiconductor device having air gaps and...

2006-07-18

2006-07-18

Parker, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S758000, C257S759000, C257S760000, C257S774000, C438S619000, C438S586000

Reexamination Certificate

active

07078814

ABSTRACT:
A method of forming a semiconductor device, and the device so formed. Depositing alternating layers of a first and a second dielectric material, wherein the first and second dielectric materials are selectively etchable at different rates. Forming a first feature within the alternating layers of dielectric material. Selectively etching the alternating layers of dielectric material to remove at least a portion of the first dielectric material in each layer having the first dielectric material and leaving the second dielectric material as essentially unetched.

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