Method of forming a semiconductor device having a trapping...

Details Method of forming a semiconductor device having a trapping... Method of forming a semiconductor device having a trapping...

2007-06-05

2010-10-05

Monbleau, Davienne (Department: 2893)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S216000, C438S696000, C257SE21679

Reexamination Certificate

active

07807557

ABSTRACT:
A semiconductor device includes: source/drain regions formed in a semiconductor substrate; a trapping film for storing information by accumulating charges, the trapping film being formed in a region on the semiconductor substrate which includes a region on a channel region between the source/drain regions; and gate electrodes formed on the trapping film. A silicon nitride film containing carbon is formed by low pressure CVD using an organic material so as to cover the gate electrodes and a part of the trapping film which is located between adjacent gate electrodes.

REFERENCES:
patent: 4603059 (1986-07-01), Kiyosumi et al.
patent: 5539154 (1996-07-01), Nguyen et al.
patent: 6962862 (2005-11-01), Kumamoto
patent: 7241632 (2007-07-01), Yang
patent: 2000-091450 (2000-03-01), None
patent: 2001-077220 (2001-03-01), None

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