Method of forming a semiconductor device having a titanium salic

Details Method of forming a semiconductor device having a titanium salic Method of forming a semiconductor device having a titanium salic

1997-03-31

1999-12-14

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438486, 438655, 438660, H01L 2128

Patent

active

060017376

ABSTRACT:
A method of recovering crystal defects in an impurity doped diffusion silicon layer in contact with a C54 crystal phase titanium silicide layer includes the step of causing a cohesion reaction of the C54 crystal phase titanium silicide layer by heat treating the C54 crystal phase titanium silicide layer so as to cause a vacancy-diffusion of lattice-vacancy of silicon atoms from the C54 crystal phase titanium silicide layer into the impurity doped diffusion silicon layer including the crystal defects while maintaining the continuity of the C54 crystal phase titanium silicide layer.

REFERENCES:
patent: 5023201 (1991-06-01), Stanasolovich et al.
patent: 5665646 (1997-09-01), Kitano
patent: 5741725 (1998-04-01), Inoue et al.
patent: 5750437 (1998-05-01), Oda
patent: 5849634 (1998-12-01), Iwata
S. N. Hong et al., "Material and Electrical Properties of Ultra-Shallow p.sup.+ -n Junctions Formed by Low-Energy Ion Implantation and Rapid Thermal Annealing", pp. 476-486, IEEE Transactions On Electron Devices, vol. 38, No. 3, Mar. 1991.
D. S. Wen et al., "Defect annihilation in shallow p.sup.+ junctions using titanium silicide", pp. 1182-1184, American Institute of Physics, Appl. Phys. Lett. 51(15), Oct. 12, 1987.

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