Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-03-11
2008-09-09
Parekh, Nitin (Department: 2811)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S653000, C438S656000, C438S685000, C438S687000, C257S762000, C257SE23145
Reexamination Certificate
active
07422979
ABSTRACT:
A diffusion barrier stack is formed by forming a layer comprising a metal over a conductor that includes copper; and forming a first dielectric layer over the layer, wherein the dielectric layer is of a thickness that alone it can not serve as a diffusion barrier layer to the conductor and the first dielectric layer prevents oxidation of the layer. In one embodiment, the diffusion barrier stack includes two layers; the first layer is a conductive layer and the second layer is a dielectric layer. The diffusion barrier stack minimizes electromigration and copper diffusion from the conductor.
REFERENCES:
patent: 6218302 (2001-04-01), Braeckelmann et al.
patent: 6342733 (2002-01-01), Hu et al.
patent: 6358832 (2002-03-01), Edelstein et al.
patent: 6573179 (2003-06-01), Wang et al.
patent: 6573606 (2003-06-01), Sambucetti et al.
patent: 6605874 (2003-08-01), Leu et al.
patent: 6962873 (2005-11-01), Park
patent: 6975033 (2005-12-01), Ito et al.
patent: 2001/0030366 (2001-10-01), Nakano et al.
patent: 2003/0148618 (2003-08-01), Parikh
patent: 2004/0026786 (2004-02-01), Leu et al.
patent: 2004/0048468 (2004-03-01), Liu et al.
patent: 2004/0084773 (2004-05-01), Johnston et al.
patent: 2004/0248409 (2004-12-01), Padhi et al.
patent: 2006/0170106 (2006-08-01), Tseng et al.
Ishigami, T. et al.; “High Reliability Cu Interconnection Utilizing a Low Contamination CoWP Capping Layer”; IEEE; 2004; pp. 75-77; USA.
Hu, C.-K, et al.; “Comparison of Cu electromigration lifetime in Cu interconnects coated with various caps”; Applied Physics Letters; Jul. 28, 2003; pp. 1-3; vol. 83, No. 4; American Institute of Physics; USA.
Hu, C.-K et al.; “Reduced electromigration of Cu wires by surface coating”; Applied Physics Letters; Sep. 2, 2002; pp. 1782-1784; vol. 81; No. 10; American Institute of Physics; USA.
Itabashi, Takeyuki et al.; Electroless Deposited CoWB for Copper Diffusion Barrier Metal; 2002; pp. 285-287; IEEE; USA.
Acosta Edward
Chatterjee Ritwik
Filipiak Stanley M.
Garcia Sam S.
Mathew Varughese
Dolezal David G.
Freescale Semiconductor Inc.
Parekh Nitin
Vo Kim-Marie
LandOfFree
Method of forming a semiconductor device having a diffusion... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming a semiconductor device having a diffusion..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a semiconductor device having a diffusion... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3966513