Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-09-09
2008-09-09
Parekh, Nitin (Department: 2811)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S653000, C438S656000, C438S685000, C438S687000, C257S762000, C257SE23145
Reexamination Certificate
active
11078236
ABSTRACT:
A diffusion barrier stack is formed by forming a layer comprising a metal over a conductor that includes copper; and forming a first dielectric layer over the layer, wherein the dielectric layer is of a thickness that alone it can not serve as a diffusion barrier layer to the conductor and the first dielectric layer prevents oxidation of the layer. In one embodiment, the diffusion barrier stack includes two layers; the first layer is a conductive layer and the second layer is a dielectric layer. The diffusion barrier stack minimizes electromigration and copper diffusion from the conductor.
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Acosta Edward
Chatterjee Ritwik
Filipiak Stanley M.
Garcia Sam S.
Mathew Varughese
Dolezal David G.
Freescale Semiconductor Inc.
Parekh Nitin
Vo Kim-Marie
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