Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-07-04
2006-07-04
Gurley, Lynne A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S197000, C438S216000, C438S287000, C438S585000, C438S591000, C438S785000, C438S787000, C438S977000, C438S981000
Reexamination Certificate
active
07071038
ABSTRACT:
A method for forming a semiconductor device (10) creates a dielectric layer (18) with high dielectric constant. An interfacial layer (14) is formed over a semiconductor substrate (12). A dielectric layer (16) is formed over the interfacial layer, wherein the dielectric layer has a high dielectric constant (K). The dielectric layer is thinned, such as by etching or chemical mechanical polishing, wherein a thickness of the thinned dielectric layer is less than a thickness of the dielectric layer prior to thinning. In one form, the method is used to form a transistor having a gate electrode layer formed over the thinned dielectric layer and source/drain diffusions (24, 26) within the semiconductor substrate.
REFERENCES:
patent: 5985706 (1999-11-01), Gilmer et al.
patent: 6103559 (2000-08-01), Gardner et al.
patent: 6268251 (2001-07-01), Zhong et al.
patent: 6716691 (2004-04-01), Evans et al.
patent: 6780699 (2004-08-01), Tamura et al.
patent: 6787421 (2004-09-01), Gilmer et al.
patent: 2005/0280105 (2005-12-01), Andreoni et al.
patent: 2006/0043505 (2006-03-01), Parekh et al.
Choi, K. et al.; “Initial growth of interfacial oxide during deposition of HfO2on silicon”; Applied Physics Letters; Jul. 12, 2004; pp. 215-217; vol. 85, No. 2; American Institute of Physics.
Iwasaki, T.; Molecular-dynamics analysis of interfacial diffusion between high=permittivity gate dielectrics and silicon substrates; Journal of Mater. Res.; Apr. 2004; pp. 1197-1202; vol. 19, No. 4; Materials Research Society.
Toyoda, S. et al. “Effects of interlayer and annealing on chemical states of HfO2gate insulators studied by photoemission spectroscopy”; Applied Physics Letters; Mar. 29, 2004; pp. 2328-2330; vol. 84, No. 13; American Institute of Physics.
Conard, T. et al.; “TOF-SIMS as a rapid diagnostic tool to monitor the growth mode of thin (high k) films”; Applied Surface Science 203-204; 2003; pp. 400-403; Elsevier Science B.V.
Adetutu Olubunmi O.
Cotton Randy W.
Triyoso Dina H.
Chiu Joanna G.
Freescale Semiconductor, Inc
Gurley Lynne A.
King Robert L.
Simpson Cindy R.
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