Method of forming a semiconductor device featuring copper...

Details Method of forming a semiconductor device featuring copper... Method of forming a semiconductor device featuring copper...

2008-12-01

2010-06-22

Parekh, Nitin (Department: 2811)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S629000, C438S643000, C438S653000, C438S687000, C438S978000, C257SE21585

Reexamination Certificate

active

07741214

ABSTRACT:
In a semiconductor device, an insulating interlayer is provided above a semiconductor substrate, and a plurality of first wiring layers and a plurality of second wiring layers are formed in the insulating interlayer. The first wiring layers are substantially composed of copper, and are arranged in parallel at a large pitch. The second wiring layers are substantially composed of copper, and are arranged in parallel at a small pitch. A first metal capping layer is formed on each of the first wiring layers, and a second metal capping layer is formed on each of the second wiring layers. The second metal capping layer has a smaller thickness than that of the first metal capping layer.

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