Method of forming a semiconductor device comprising a dummy poly

Details Method of forming a semiconductor device comprising a dummy poly Method of forming a semiconductor device comprising a dummy poly

1998-05-26

2000-06-13

Fahmy, Wael

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438592, 438664, 438683, 438926, H01L 21425

Patent

active

060749385

ABSTRACT:
The present invention relates to a semiconductor device wherein a dummy gate electrode is fixed to the same electric potential as that of a substrate, the stable operation of an LSI is maintained and the process margin is large, and also to a producing method of the semiconductor device, and the semiconductor device comprises a P-type silicon substrate, a dummy element region unnecessary for the actual LSI operation, which is formed on the P-type silicon substrate, and a dummy gate electrode unnecessary for the actual LSI operation, which is formed on at least a part of the dummy element region through a dummy oxide film, wherein by selectively forming titanium silicide on at least a part of a surface of the dummy element region and the dummy gate electrode, a P.sup.+ -diffusion layer and a P.sup.+ -dummy gate electrode of the dummy element region are short-circuited by titanium silicide.

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patent: 5173450 (1992-12-01), Wei
patent: 5405806 (1995-04-01), Pfiester et al.
patent: 5441916 (1995-08-01), Motonami
patent: 5679607 (1997-10-01), Liu

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