Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2009-02-23
2011-11-01
Dang, Phuc (Department: 2892)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S054000, C438S059000, C257S190000, C257S410000
Reexamination Certificate
active
08048791
ABSTRACT:
Methods for forming a semiconductor device comprising a semiconductor substrate are provided. In accordance with an exemplary embodiment, a method comprises forming a channel layer overlying the semiconductor substrate, forming a channel capping layer having a first surface overlying the channel layer, oxidizing the first surface of the channel capping layer, and depositing a high-k dielectric layer overlying the channel capping layer.
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Carter Richard J.
Choi Kisik
Hargrove Michael
Kluth George
Tsang Ying H
Dang Phuc
GLOBALFOUNDRIES Inc.
Ingrassia Fisher & Lorenz P.C.
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