Method of forming a semiconductor capacitor using amorphous...

Details Method of forming a semiconductor capacitor using amorphous... Method of forming a semiconductor capacitor using amorphous...

2009-01-22

2010-11-02

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S396000, C438S398000, C438S399000, C438S254000, C257SE21008, C257SE21014

Reexamination Certificate

active

07824998

ABSTRACT:
A method includes forming an amorphous carbon layer over a first dielectric layer formed over a substrate, forming a second dielectric layer over the amorphous carbon layer; and forming an opening within the amorphous carbon layer and second dielectric layer by a first etch process to partially expose a top surface of the first dielectric layer. A substantially conformal metal-containing layer is formed over the second dielectric layer and within the opening. The second dielectric layer and a portion of the metal-containing layer are removed. The amorphous carbon layer is removed by an oxygen-containing plasma process to expose a top surface of the first dielectric layer. An insulating layer is formed over the metal-containing layer, and a second metal-containing layer is formed over the insulating layer to form a capacitor.

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