Method of forming a semi-insulating region

Details Method of forming a semi-insulating region Method of forming a semi-insulating region

2006-06-20

2006-06-20

Geyer, Scott (Department: 2812)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S531000, C438S533000

Reexamination Certificate

active

07064048

ABSTRACT:
A semiconductor substrate is provided, and at least one first mask is formed above the semiconductor substrate. The first mask blocks at least one semi-insulating region. A second mask is thereafter formed on a surface of the semiconductor substrate. The second mask covers the semi-insulating region. The semi-insulating region is implanted with a high energy beam of particles by utilizing the second mask and the first mask as particle hindering masks. Finally, the second mask is removed.

REFERENCES:
patent: 6313905 (2001-11-01), Brugger et al.
patent: 6624030 (2003-09-01), Chang et al.
patent: 2004/0051148 (2004-03-01), Johnson et al.

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