Method of forming a semi-insulating region

Details Method of forming a semi-insulating region Method of forming a semi-insulating region

2006-09-12

2006-09-12

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S403000, C438S407000, C438S423000

Reexamination Certificate

active

07105426

ABSTRACT:
A semiconductor substrate is provided, and at least one first mask is formed above the semiconductor substrate. The first mask has a plurality of thicknesses and blocks at least one semi-insulating region. A second mask is thereafter formed on a surface of the semiconductor substrate. The second mask covers the semi-insulating region. The semi-insulating region is implanted with a high energy beam of particles by utilizing the second mask and the first mask as particle hindering masks. Finally, the second mask is removed.

REFERENCES:
patent: 6284660 (2001-09-01), Doan
patent: 2004/0082138 (2004-04-01), Wen-Chin et al.
patent: 2004/0241955 (2004-12-01), Doris et al.

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