Method of forming a resist pattern utilizing an acid water-solub

Details Method of forming a resist pattern utilizing an acid water-solub Method of forming a resist pattern utilizing an acid water-solub

1995-11-21

1997-07-15

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430166, 430326, 430327, 430330, G03F 730, G03F 738, G03F 740

Patent

active

056481993

ABSTRACT:
A method of forming a resist pattern is provided that has high resolution, wide focus margin, and favorable configuration, and high sensitivity. A resist film of a type that is developed with an alkali developer and that is subject to chemical change upon receiving light is formed on a semiconductor substrate. On the resist film, an acid film is formed of an acid water-soluble material, and that has transmittance of at least 70% before and during exposure of the light when the film thickness thereof is 1 .mu.m. The light is selectively directed towards the resist film, whereby an image is formed in the resist film. The resist film is developed with an alkali developer to form a resist pattern.

REFERENCES:
patent: 5162193 (1992-11-01), Murray et al.

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