Method of forming a resist pattern using an anti-reflective laye

Details Method of forming a resist pattern using an anti-reflective laye Method of forming a resist pattern using an anti-reflective laye

1993-12-29

1995-12-05

Schilling, Richard L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430159, 430166, 430272, 430275, 430276, 430324, 430325, 430326, 430512, 430524, 430525, G03C 1825, G03F 730

Patent

active

054728274

ABSTRACT:
A method of determining an optimum condition of an anti-reflective layer upon forming a resist pattern by exposure with a monochromatic light, forms the anti-reflective layer with these conditions and forms a resist pattern using a novel anti-reflective layer. The method comprises (I) forming an equi-contour line for the amount of absorbed light regarding a photoresist of an optional film thickness using the optical condition of the anti-reflective layer as a parameter, (II) conducting the same procedure as in (I) above for a plurality of resist film thicknesses, (III) finding a common region for the amount of absorbed light with respect to each of the traces obtained, thereby determining the optical condition for the anti-reflective layer, (IV) applying same procedures as described above while changing the condition of the anti-reflective layer, thereby determining the optical condition for the anti-reflective layer, and (V) determining the optimum optical condition such as the kind and the thickness of the anti-reflective layer under a certain condition of the anti-reflective layer.

REFERENCES:
patent: 4407927 (1983-10-01), Kamoshida et al.

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