Method of forming a resist pattern

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Processing feature prior to imaging

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430322, 430330, H01L 21027

Patent

active

059940360

ABSTRACT:
A method of forming a resist pattern comprises the following steps. A resist is applied on a wafer for subsequent baking the same. Subsequently, the resist-applied wafer is then stored in an atmosphere maintained at a humidity of not less than 80% until the resist-applied wafer is placed in an exposure system for exposure thereof by use of a photo-mask. A development of the exposed resist on the wafer is carried out to form a resist pattern. It is possible to further store the wafer in a clean room before the exposure. The above resist is preferably a chemical sensitizing resist.

REFERENCES:
patent: 5127362 (1992-07-01), Iwatsu
patent: 5300400 (1994-04-01), Schwain

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