Method of forming a resist mask resistant to plasma etching

Details Method of forming a resist mask resistant to plasma etching Method of forming a resist mask resistant to plasma etching

1983-05-20

1985-03-12

Kittle, John E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Finishing or perfecting composition or product

430313, 430323, 156628, 156643, 1566591, 427 38, G03C 538

Patent

active

045045747

ABSTRACT:
A mask which is resistant to a plasma etching treatment is formed by lithographically patterning a radiation sensitive film present on a substrate. The etch resistance of the mask is enhanced by exposure to a carbon monoxide plasma which forms a region with an enhanced etch resistance over the surface of the patterned film. This method may be used, for example, to manufacture a photomask using a chromium coated glass substrate, or during the manufacture of semiconductor devices on a semiconductor wafer substrate.

REFERENCES:
patent: 4253888 (1981-03-01), Kikuchi
patent: 4370405 (1983-01-01), O'Toole et al.
patent: 4373018 (1983-02-01), Reichmanis et al.
Johnson et al., IBM Technical Disclosure Bulletin, vol. 20, No. 9, Feb. 1978, pp. 3737-3738.

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