Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Diffusing a dopant
Reexamination Certificate
2011-06-21
2011-06-21
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Diffusing a dopant
C438S549000, C438S551000, C438S552000
Reexamination Certificate
active
07964485
ABSTRACT:
A method for forming a doped region of a semiconductor device includes masking a portion of a substrate with a mask. The mask is configured to create a graded doping profile within the doped region. The method also includes performing an implant using the mask to create doped areas and undoped areas in the substrate. The method further includes diffusing the doped areas to create the graded doping profile in the doped region. The mask could include a first region having openings distributed throughout a photo-resist material, where the openings vary in size and spacing. The mask could also include a second region having blocks of photo-resist material distributed throughout an open region, where the photo-resist blocks vary in size and spacing. Diffusing the doped areas could include applying a high temperature anneal to smooth the doped and undoped areas to produce a linearly graded doping profile.
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French William
Mazotti Erika
Mirgorodski Yuri
National Semiconductor Corporation
Patton Paul E
Smith Zandra
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