Method of forming a reduced size contact in a dielectric layer b

Details Method of forming a reduced size contact in a dielectric layer b Method of forming a reduced size contact in a dielectric layer b

1998-04-23

1999-11-30

Fahmy, Wael M.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438637, 438763, 438911, 438947, H01L 2131

Patent

active

059942169

ABSTRACT:
A method for forming a reduced size contact hole over a structure. The method comprises the steps of: forming a dielectric layer on said structure; forming a polysilicon layer on said dielectric layer; forming a silicon nitride layer on said polysilicon layer; forming a photoresist block on said silicon nitride layer to cover a portion of said silicon nitride layer defining a contact hole region; removing portions of said silicon nitride layer left uncovered by said photoresist block; removing said photoresist block; forming field oxide isolation regions using said silicon nitride layer as a mask, said field oxide isolation regions having bird's beaks penetrating under said silicon nitride layer; removing said silicon nitride layer, thereby exposing a portion of said polysilicon layer left exposed by said field oxide isolation regions; etching said polysilicon layer using said field oxide isolation regions as a first mask; and etching said dielectric layer using said polysilicon layer as a second etching mask.

REFERENCES:
patent: 5795814 (1998-08-01), Tasaka

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