Method of forming a recessed buried-diffusion device

Details Method of forming a recessed buried-diffusion device Method of forming a recessed buried-diffusion device

2005-12-13

2005-12-13

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S408000

Reexamination Certificate

active

06975000

ABSTRACT:
A method of forming a device (and the device so formed) comprising the following steps. A structure having a gate structure formed thereover is provided. Respective low doped drains are formed within the structure at least adjacent to the gate structure. A pocket implant is formed within the structure. The structure adjacent the gate structure is etched to form respective trenches having exposed side walls. Respective first liner structures are formed at least over the exposed side walls of trenches. Respective second liner structures are formed over the first liner structures. Source/drain implants are formed adjacent to, and outboard of, second liner structures to complete formation of device.

REFERENCES:
patent: 5734185 (1998-03-01), Iguchi et al.
patent: 6025235 (2000-02-01), Krivokapic
patent: 6498067 (2002-12-01), Perng et al.
patent: 6563176 (2003-05-01), Gauthier et al.
patent: 2003/0030114 (2003-02-01), Kuwazawa
patent: 2005/0035408 (2005-02-01), Wang et al.

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