Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2005-03-01
2005-03-01
Deo, Duy-Vu N. (Department: 1765)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
C430S296000, C438S745000
Reexamination Certificate
active
06861177
ABSTRACT:
A method of forming a read sensor that has a very narrow track width is disclosed. The method involves forming a thin lift-off mask over a central region of a sensor layer, which is subsequently ion-milled and deposited with hard bias and lead layers. The thin lift-off mask is made by forming a release layer over the sensor layer; forming a hardmask layer over the release layer; forming a photoresist layer over the hardmask layer; imaging and developing the photoresist layer such that end portions of the photoresist layer are removed and a central portion of the photoresist layer remains; reactive ion etching (RIE) the hardmask layer such that end portions of the hardmask layer are removed and a central portion of the hardmask layer remains; stripping the central portion of the photoresist layer; and etching the release layer such that end portions of the release layer are removed and a central portion of the release layer remains. The hardmask layer may be made from a highly-etch-resistant material, such as silicon, titanium, or tantalum. The release layer may be made from, e.g., polydimethylglutarimide (PMGI) which may be RIE'd, or a metal (such as AlCu) which may be wet-etched. Using this method, shadowing can be minimized and undercut size can be sufficiently controlled for defining narrow track widths.
REFERENCES:
patent: 4838994 (1989-06-01), Gulde et al.
patent: 5018037 (1991-05-01), Krounbi et al.
patent: 5491600 (1996-02-01), Chen et al.
patent: 6001734 (1999-12-01), Drynan
patent: 6156485 (2000-12-01), Tang et al.
patent: 6159863 (2000-12-01), Chen et al.
patent: 6162587 (2000-12-01), Yang et al.
patent: 6184142 (2001-02-01), Chung et al.
patent: 6194323 (2001-02-01), Downey et al.
patent: 6211044 (2001-04-01), Xiang et al.
patent: 6218056 (2001-04-01), Pinarbasi et al.
patent: 6218078 (2001-04-01), Iacoponi
patent: 6449135 (2002-09-01), Ding et al.
patent: 6468902 (2002-10-01), Kawai
patent: 6493926 (2002-12-01), Han et al.
patent: 20020160613 (2002-10-01), Sayama et al.
patent: 20030182790 (2003-10-01), Hsiao et al.
patent: 2331273 (1999-05-01), None
patent: 57093526 (1982-06-01), None
patent: 2207418 (1990-08-01), None
patent: 2000252259 (2000-09-01), None
McFadyen Ian Robson
Pinarbasi Mustafa
Renaldo Alfred Floyd
Simmons Randall George
Werner Douglas Johnson
Deo Duy-Vu N.
Hitachi Global Storage Technologies - Netherlands B.V.
Oskorep, Esq. John J.
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