Method of forming a quantum effect switching device

Details Method of forming a quantum effect switching device Method of forming a quantum effect switching device

1990-11-02

1992-03-17

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 41, 437 44, 437 45, 437189, 148DIG100, 357 4, 357 56, H01L 21265

Patent

active

050968467

ABSTRACT:
A method for forming a quantum effect switching device is disclosed which comprises the step of forming a heterostructure substrate 10. A silicon nitride layer 22 is formed on an outer surface of the substrate 10. An aluminum mask body 30 is formed using a lift-off procedure. Aluminum mask body 30 is then used to form a silicon nitride mask body 32 from the silicon nitride layer 22 using a CF.sub.4 /O.sub.2 reactive ion etch process. A boron trichloride etch process is then used to form a dual column structure 34 while removing the aluminum mask body 30. A buffered HF wet etch process removes the silicon nitride mask body 32. Separate metal contacts can then be made to electrically separate points on the outer surface of the dual column structure 34.

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