Method of forming a polycrystalline silicon layer, a thin film t

Details Method of forming a polycrystalline silicon layer, a thin film t Method of forming a polycrystalline silicon layer, a thin film t

1996-08-02

1998-06-30

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 72, 257411, H01L 2904

Patent

active

057738440

ABSTRACT:
A thin film transistor includes an amorphous silicon layer formed on a substrate, a gate insulator formed on the amorphous silicon layer, a gate electrode formed on the gate insulator, source and drain contact regions of polycrystalline silicon formed in the amorphous silicon layer on both sides of the gate electrode, and source and drain electrodes formed respectively in contact with the source and drain contact regions. Particularly, the gate insulator includes a first insulating film which covers the amorphous silicon layer as a reflectivity reducing film for reducing the optical reflectivity of the amorphous silicon layer and the source and drain contact regions are formed by an annealing process for applying a laser beam to the amorphous silicon layer via the first insulating film.

REFERENCES:
patent: 5500380 (1996-03-01), Kim
patent: 5614729 (1997-03-01), Ukai et al.

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