Method of forming a planar isolation structure in an integrated

Details Method of forming a planar isolation structure in an integrated Method of forming a planar isolation structure in an integrated

1995-12-22

1999-10-26

Fourson, George

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438445, H01L 21762

Patent

active

059727764

ABSTRACT:
A method is provided for forming isolated regions of oxide of an integrate circuit, and an integrated circuit formed according to the same. A plurality of active areas is formed in an upper surface of a portion of a substrate body. A field oxide region is formed which separates at least two of the plurality of the active areas, wherein an upper surface of the field oxide region is substantially planar with an upper surface of the substrate body. Nitride spots are formed in the bulk of the field oxide region and not in the active area which do not need to be removed since they do not effect device integrity.

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