Method of forming a photoresist pattern in a semiconductor devic

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

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430311, 430319, 430322, 430394, G03C 500

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055321143

ABSTRACT:
A photoresist pattern in a semiconductor device which can form a ultra micro pattern beyond the limitation of the resolution power obtainable by an ordinary stepper. A first, second, third and fourth exposure processes using a first, second, third and fourth photo masks.

REFERENCES:
patent: 5045417 (1991-09-01), Okamoto
patent: 5217830 (1993-06-01), Lowrey
patent: 5308741 (1994-05-01), Kemp
patent: 5407785 (1995-04-01), Leroux

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