Method of forming a phase changeable material layer, a...

Details Method of forming a phase changeable material layer, a... Method of forming a phase changeable material layer, a...

2006-02-14

2009-08-04

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Having selenium or tellurium elemental semiconductor component

C257SE31027, C257SE31029, C438S095000

Reexamination Certificate

active

07569417

ABSTRACT:
A phase changeable material layer usable in a semiconductor memory device and a method of forming the same are disclosed. The method includes forming a plasma in a chamber having a substrate disposed therein, providing a first source gas including a germanium based material to form a first layer including the germanium based material on the substrate while maintaining the plasma in the chamber, providing a second source gas including a tellurium based material to react with the first layer to form a first composite material layer including a germanium-tellurium composite material on the substrate while maintaining the plasma in the chamber, providing a third source gas including an antimony based material to form a second layer including the antimony based material on the first composite material layer while maintaining the plasma in the chamber, and providing a fourth source gas including tellurium based material to react with the second layer including antimony based material to form a second composite material layer including an antimony-tellurium composite material on the first composite material layer. Accordingly, the phase changeable material layer may be formed at a low temperature and power to have desirable electrical characteristics.

REFERENCES:
patent: 5596522 (1997-01-01), Ovshinsky et al.
patent: 5825046 (1998-10-01), Czubatyj et al.
patent: 7005665 (2006-02-01), Furkay et al.
patent: 7265373 (2007-09-01), Wang et al.
patent: 2004/0224504 (2004-11-01), Gadgil
patent: 10-2004-0088938 (2004-10-01), None

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