Method of forming a pattern in semiconductor device manufacturin

Details Method of forming a pattern in semiconductor device manufacturin Method of forming a pattern in semiconductor device manufacturin

1991-09-25

1993-08-17

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156657, 156662, 437225, 437233, 437234, 437 3, 437 4, 437 5, H01L 2100

Patent

active

052365476

ABSTRACT:
In a method of forming a pattern in semiconductor device manufacturing process, a thin film consisting of a silicon nitride film is formed on a substrate. Ga ions are implanted by a focussed ion beam into a selected region of the thin film. At this point, a pattern to be formed is defined by the selected region. Subsequently, the thin film is dry etched by CF.sub.4. At this point, the selected region into which the ions are implanted functions as an etching inhibition region.

REFERENCES:
patent: 4377734 (1983-03-01), Mashiko et al.
patent: 4514251 (1985-04-01), van Ommen et al.
patent: 5074955 (1991-12-01), Henry et al.
Hinkel et al, "Method of Influencing the Etch Rate of PECVD Films and Application of the Method", IBM Technical Disclosure Bulletin, vol. 24, No. 11B, Apr. 1982.
J. Vac. Sci. Technol., vol. 19, pp. 1379-1384, Nov./Dec. 1981 Venkatesan et al: "Plasma-developed ion-implanted resists . . ."
J. Vac. Sci. Technol., vol. 133, pp. 879-883, May/Jun. 1985 Milgram et al: "A bilevel resist for ion beam lithography".
Appl. Phys. Lett., vol. 57, pp. 1672-1674.
Wang et al: "Vacuum lithography for in situ fabrication of . . . ".

Affiliated with

Also associated with

Rating

Method of forming a pattern in semiconductor device manufacturin does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a pattern in semiconductor device manufacturin, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a pattern in semiconductor device manufacturin will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2241294