Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2008-03-13
2010-12-14
Smoot, Stephen W (Department: 2813)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C438S502000, C257SE21464, C977S892000
Reexamination Certificate
active
07851336
ABSTRACT:
A method for forming a passivated densified nanoparticle thin film on a substrate in a chamber is disclosed. The method includes depositing a nanoparticle ink on a first region on the substrate, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30° C. and about 400° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed. The method further includes flowing an oxidizer gas into the chamber; and heating the porous compact to a second temperature between about 600° C. and about 1000° C., and for a second time period of between about 5 seconds and about 1 hour; wherein the passivated densified nanoparticle thin film is formed.
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Kelman Maxim
Poplavskyy Dmitry
Terry Mason
Foley & Lardner LLP
Innovalight, Inc.
Smoot Stephen W
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