Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-06-14
2005-06-14
Dang, Trung (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S221000, C438S296000
Reexamination Certificate
active
06905919
ABSTRACT:
A MOSFET device structure formed on a silicon on insulator layer, and a process sequence employed to fabricate said MOSFET device structure, has been developed. The process features insulator filled, shallow trench isolation (STI) regions formed in specific locations of the MOSFET device structure for purposes of reducing the risk of parasitic transistor formation underlying a gate structure junction. After formation of either a “T” shaped, or an “H” shaped gate structure, body contact regions of a first conductivity type are formed adjacent to both an STI region and to a component of the gate structure. Formation of a source/drain region of a second conductivity type located on the opposite side of the same STI region, and the same gate structure component, is next performed. Unwanted parasitic transistor formation, which can occur underlying the gate structure via the body contact region and the source/drain region, is prevented by the presence of the separating STI region.
REFERENCES:
patent: 5145802 (1992-09-01), Tyson et al.
patent: 5405795 (1995-04-01), Beyer et al.
patent: 5886385 (1999-03-01), Arisumi et al.
patent: 6337230 (2002-01-01), Hirano
patent: 6521959 (2003-02-01), Kim et al.
patent: 6537861 (2003-03-01), Kroell et al.
Ang Diing Shenp
Chan Yeen Tat
Goh Wang Ling
Lun Zhao
Nga Yiang Aun
Chartered Semiconductor Manufacturing Ltd.
Dang Trung
Pike Rosemary L. S.
Saile George O.
LandOfFree
Method of forming a partially depleted silicon on insulator... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming a partially depleted silicon on insulator..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a partially depleted silicon on insulator... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3519861