Semiconductor device manufacturing: process – Having metal oxide or copper sulfide compound semiconductor...
Reexamination Certificate
2007-02-13
2007-02-13
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Having metal oxide or copper sulfide compound semiconductor...
C438S507000, C257SE33019
Reexamination Certificate
active
10896826
ABSTRACT:
A method of depositing a p-type magnesium-, cadmium- and/or zinc-oxide-based II-VI Group compound semiconductor crystal layer over a substrate by a metalorganic chemical vapor deposition technique. A reaction gas is supplied to a surface of a heated substrate in a direction parallel or oblique to the substrate. The p-type magnesium-, cadmium- and/or zinc-oxide-based II-VI Group compound semiconductor crystal layer is grown on the heated substrate, while introducing a pressing gas substantially in a vertical direction toward the substrate to press the reaction gas against the entire surface of the substrate.
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Ganesan Shanthi
Maciejewski Joseph Owen
Munne Vincente
Nause Jeffrey E.
Alston & Bird LLP
Cermet, Inc.
Dolan Jennifer M.
Jr. Carl Whitehead
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