Method of forming a nonvolatile memory device using...

Details Method of forming a nonvolatile memory device using... Method of forming a nonvolatile memory device using...

2011-07-26

2011-07-26

Thomas, Toniae M (Department: 2822)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S260000, C438S593000, C438S947000, C257SE21681, C216S054000, C216S056000, C977S813000, C977S856000, C977S893000

Reexamination Certificate

active

07985686

ABSTRACT:
A floating gate for a field effect transistor (and method for forming the same and method of forming a uniform nanoparticle array), includes a plurality of discrete nanoparticles in which at least one of a size, spacing, and density of the nanoparticles is one of templated and defined by a self-assembled material.

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