Method of forming a negative differential resistance device

Details Method of forming a negative differential resistance device Method of forming a negative differential resistance device

2006-09-26

2006-09-26

Le, Vu A. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Negative resistance

C365S174000

Reexamination Certificate

active

07113423

ABSTRACT:
A negative differential resistance (NDR) field-effect transistor element is disclosed, formed on a silicon-based substrate using conventional MOS manufacturing operations. Methods for improving a variety of NDR characteristics for an NDR element, such as peak-to-valley ratio (PVR), NDR onset voltage (VNDR) and related parameters are also disclosed.

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