Static information storage and retrieval – Systems using particular element – Negative resistance
Reexamination Certificate
2005-12-27
2005-12-27
Le, Vu A. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Negative resistance
C365S174000
Reexamination Certificate
active
06980467
ABSTRACT:
A negative differential resistance (NDR) field-effect transistor element is disclosed, formed on a silicon-based substrate using conventional MOS manufacturing operations. Methods for improving a variety of NDR characteristics for an NDR element, such as peak-to-valley ratio (PVR), NDR onset voltage (VNDR) and related parameters are also disclosed.
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Bever Hoffman & Harms LLP
Kubodera John M.
Le Vu A.
Progressant Technologies, Inc.
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