Method of forming a MIM capacitor with metal nitride electrode

Details Method of forming a MIM capacitor with metal nitride electrode Method of forming a MIM capacitor with metal nitride electrode

2005-04-19

2005-04-19

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C438S243000, C438S396000, C438S398000, C257S296000, C257S298000

Reexamination Certificate

active

06881642

ABSTRACT:
A method of forming an MIM capacitor with low leakage and high capacitance is disclosed. A layer of titanium nitride (TiN) or boron-doped titanium nitride (TiBN) material is formed as a lower electrode over an optional capacitance layer of hemispherical grained polysilicon (HSG). Prior to the dielectric formation, the first layer may be optionally subjected to a nitridization or oxidation process. A dielectric layer of, for example, aluminum oxide (Al2O3) formed by atomic layer deposition (ALD) is fabricated over the first layer and after the optional nitridization or oxidation process. An upper electrode of titanium nitride (TiN) or boron-doped titanium nitride (TiBN) is formed over the dielectric layer.

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