Method of forming a microscopic pattern with far UV pattern expo

Details Method of forming a microscopic pattern with far UV pattern expo Method of forming a microscopic pattern with far UV pattern expo

1984-05-02

1986-09-30

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430 8, 430167, 430194, 430197, 430296, 430320, 430323, 430325, 156643, G03F 726, H01L 2130, C23F 108

Patent

active

046147063

ABSTRACT:
A film of a photoresist having phenolic hydroxyl groups is irradiated with far-ultraviolet radiation, and is thereafter developed with an alkaline aqueous solution. Using as a mask a resist pattern thus obtained, dry etching is carried out to form a microscopic pattern. Since the photoresist is highly immune against the dry etching, the microscopic pattern can be formed at a high precision. By adding an azide of a specified structure, the photoresist has its sensitivity to the far-ultraviolet radiation enhanced more.

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Deckert et al., "Microlithography . . . Fabrication", Journal of the Electrochemical Society, 3/1980, pp. 45C-56C.

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