Method of forming a microelectronic device

Details Method of forming a microelectronic device Method of forming a microelectronic device

2008-01-29

2008-01-29

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

C438S459000

Reexamination Certificate

active

07323355

ABSTRACT:
A method of forming a microelectronic device (300) including the steps of forming a sensor component (100) and a capping component (200). The sensor component (100) includes a sensor structure (150, 152) and a conductive trace (160, 162) formed on a first SOI semiconductor wafer (110). The capping component (200) includes a plurality of capping layers (230, 232) formed on a second SOI semiconductor wafer (210). During fabrication the capping component (200) is bonded to the sensor component (100) prior to fabrication of a through hole (260) in the capping component (200). Subsequent to bonding the two components together, wafer thinning removes a handle layer (112) of the first SOI semiconductor wafer (110) and a handle layer (212) of the second SOI semiconductor wafer (210). A through hole (260) is etched in the capping component (200) using a buried oxide layer (214) of the second SOI semiconductor wafer (220) as a hard mask (250), thereby exposing the conductive trace (160, 162) formed as a part of the sensor component (100).

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