Method of forming a micro pattern of a semiconductor device

Details Method of forming a micro pattern of a semiconductor device Method of forming a micro pattern of a semiconductor device

2011-02-01

2011-02-01

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S700000, C438S701000, C438S702000, C438S736000, C438S738000, C216S072000

Reexamination Certificate

active

07879729

ABSTRACT:
In a method of forming micro patterns of a semiconductor device, first etch mask patterns are formed over a semiconductor substrate. An auxiliary film is formed over the semiconductor substrate including a surface of the first etch mask patterns. Second etch mask patterns are formed between the auxiliary films formed on sidewalls of the first etch mask patterns. The first etch mask patterns and the second etch mask patterns are formed using the same material. The auxiliary films between the first and second etch mask patterns are removed. Accordingly, more micro patterns can be formed than allowed by the resolution limit of an exposure apparatus while preventing misalignment.

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Machine translation of IDS cited patent KR100714305 B1.
Machine translation of IDS cited patent KR1020070037098 A.
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