Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-06-20
2010-12-14
Pham, Thanh V (Department: 2894)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S624000, C257SE21585
Reexamination Certificate
active
07851353
ABSTRACT:
Methods of forming metal silicide layers. The methods include: forming a silicon-rich layer between dielectric layers; contacting the silicon-rich layer with a metal layer and heating the silicon rich-layer and the metal layer to diffuse metal atoms from the metal layer into the silicon layer to form a metal silicide layer.
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Anderson Felix Patrick
He Zhong-Xiang
McDevin Thomas Leddy
White Eric Jeffrey
Canale Anthony J.
International Business Machines - Corporation
Payen Marvin
Pham Thanh V
Schmeiser Olsen & Watts
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