Method of forming a metal silicide film

Details Method of forming a metal silicide film Method of forming a metal silicide film

1987-10-16

1991-09-10

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156610, 156DIG64, 156DIG73, 156DIG100, 156DIG103, C30B 110

Patent

active

050471112

ABSTRACT:
Films of desired metal, e.g., Ni or Co, and of Si are laminated alternately n a single crystal silicon substrate to form a multi-layered structure, and thereafter the substrate is heated to grow an epitaxial NiSi.sub.2 or CoSi.sub.2 film in solid phase with less diffusion of Ni or Co atoms into the silicon substrate. Each layer in the multi-layered structure has a thickness selected in the range of 30-300 A with the overall composition ratio Si/Ni (or Si/Co) in the range of 1.8-2.0. The lamination process is done at a substrate temperature which does not cause the laminated films to react with the substrate and does not cause the multi-layered structure to become polycrystalline, e.g. below 350.degree. C. for the formation of an NiSi.sub.2 film or below 450.degree. C. for the formation of a CoSi.sub.2 film. The solid phase epitaxy is achieved at a substrate heating temperature in a range of 350.degree.-750.degree. C. for the formation of an epitaxial NiSi.sub.2 film or 450.degree.-1000.degree. C. for the formation of a CoSi.sub.2 film.

REFERENCES:
patent: 3716407 (1973-02-01), Kahn
patent: 4088515 (1978-05-01), Blakeslee et al.
patent: 4159919 (1979-07-01), McFee et al.
patent: 4477308 (1984-10-01), Gibsen et al.
patent: 4492971 (1985-01-01), Bean et al.
patent: 4545115 (1985-10-01), Bauer et al.
patent: 4554030 (1985-11-01), Hasima
patent: 4554045 (1985-11-01), Bean et al.
patent: 4707197 (1987-11-01), Hensel et al.
patent: 4755256 (1988-07-01), Ditchek

Affiliated with

Also associated with

Rating

Method of forming a metal silicide film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a metal silicide film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a metal silicide film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-537957