Method of forming a metal silicide

Details Method of forming a metal silicide Method of forming a metal silicide

2006-06-27

2006-06-27

Sarkar, Asok K. (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S766000, C438S664000, C438S655000, C438S682000, C438S683000, C438S659000, C438S528000, C438S663000, C438S798000, C438S765000, C438S423000, C438S649000

Reexamination Certificate

active

07067410

ABSTRACT:
The present invention provides a technique for forming a metal silicide, such as a cobalt disilicide, even at extremely scaled device dimensions without unduly degrading the film integrity of the metal silicide. To this end, an ion implantation may be performed, advantageously with silicon, prior to a final anneal cycle, thereby correspondingly modifying the grain structure of the precursor of the metal silicide.

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