Method of forming a metal-semiconductor field effect transistors

Details Method of forming a metal-semiconductor field effect transistors Method of forming a metal-semiconductor field effect transistors

1998-05-08

2000-03-07

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

438800, H01L 21338

Patent

active

06033942&

ABSTRACT:
A comb-shape MESFET assembly has a plurality of unit FETs including first, second and third groups of unit FETs. The pinch-off voltages of the unit FETs are different from group to group by a step difference. The different pinch-off voltages provide a tailored change in the third-order intermodulation distortion in the output of the MESFET assembly. The step difference in the pinch-off voltage is generated by different thicknesses or impurity concentrations of a semiconductor active layer, different gate length of the unit FETs or different types of stress in the gate insulator films.

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