Method of forming a metal oxide film

Details Method of forming a metal oxide film Method of forming a metal oxide film

1996-02-20

1997-11-11

King, Roy V.

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

4272553, 4271263, 427 62, 505447, 505477, 505734, B05D 306, C23C 1600

Patent

active

056861516

ABSTRACT:
Disclosed is method of forming a metal oxide film including the steps of introducing a gas containing a metal compound having at least one element selected from the group consisting of carbon and a halogen element, into a process chamber accommodating a substrate, introducing a gas containing a compound having a hydroxyl group into the process chamber, introducing a gas containing oxygen which has been converted to a plasma state, into the process chamber, and forming the metal oxide film on the substrate using the gas containing a metal compound, the gas containing a compound having a hydroxyl group, and the gas containing oxygen which has been converted to a plasma state.

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Chern et al, Appl. Phys. lett. 60(9) Mar. 1992, pp. 1144-1146.
Ebihara et al, J. Appl. Phys. 68(3) Aug. 1990, pp. 1151-1156.
Wills et al, Appl. Phys. lett. 60(1) Jan. 1992, pp. 41-43.

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