Method of forming a metal layer over patterned dielectric by...

Details Method of forming a metal layer over patterned dielectric by... Method of forming a metal layer over patterned dielectric by...

2005-10-04

2005-10-04

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S677000, C438S687000

Reexamination Certificate

active

06951816

ABSTRACT:
A metal layer is formed by means of an electroless plating process, wherein a surface region of an underlying material is catalytically activated in that a catalyst is deposited or incorporated by CVD, PVD or ALD during and/or after the deposition of the underlying material. In this way, superior metal seed layers may be formed even in high aspect ratio vias of metallization structures.

REFERENCES:
patent: 5969422 (1999-10-01), Ting et al.
patent: 6403481 (2002-06-01), Matsuda et al.
patent: 6461675 (2002-10-01), Paranjpe et al.
patent: 6479902 (2002-11-01), Lopatin et al.
patent: 2002/0050459 (2002-05-01), Matsuda et al.
patent: 2003/0140988 (2003-07-01), Gandikota et al.
patent: 2004/0041194 (2004-03-01), Marsh
patent: 1 201 787 (2002-05-01), None
patent: 2002356733 (2002-12-01), None
patent: WO 02/45155 (2002-06-01), None
Shacham-Diamand et al., “Electroless copper deposition for ULSI,”Thin Solid Films, 262:93-103, 1995.
Lin et al., “Interfacial mechanism studies of electroless plated CU films on a-Ta:N layers catalyzed by PIII,”J. Vac. Sci. Technol., 20:733-40, 2002.

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