Method of forming a metal layer on a substrate, including format

Details Method of forming a metal layer on a substrate, including format Method of forming a metal layer on a substrate, including format

1996-10-25

2000-12-05

Elms, Richard

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438656, 438683, 438685, H01L 214763

Patent

active

061566454

ABSTRACT:
A wetting layer is formed on a substrate at a relatively high process temperature (e.g., the temperature of the substrate and/or the temperature within a process chamber in which the wetting layer is formed). A metallization layer that is subsequently formed on the wetting layer adheres to the wetting layer better than the metallization layer would adhere to the wetting layer if the wetting layer was formed at a lower process temperature. The high process temperature causes the density of the wetting layer to be increased, so that, consequently, the wetting layer has a smoother surface to which the metallization layer can adhere.

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