Method of forming a metal interconnection line in a...

Details Method of forming a metal interconnection line in a... Method of forming a metal interconnection line in a...

2005-12-22

2008-08-19

Baumeister, Bradley W. (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S622000, C438S624000, C257SE21507

Reexamination Certificate

active

07413972

ABSTRACT:
A method of forming a metal line in a semiconductor device using a fluorine doped silica glass (FSG) insulation layer. The method includes forming a lower metal layer on a insulation layer on a semiconductor substrate, forming a metal oxide layer on a sidewall of the lower metal layer, forming a barrier insulation layer covering the lower metal layer and metal oxide layer, forming an FSG insulation layer on the barrier insulation layer, forming a via contact that penetrates the FSG insulation layer so as to connect to the lower metal layer, and forming an upper metal layer electrically connected to the via contact.

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patent: 10-2004-0017905 (2004-03-01), None
patent: 10-2004-0108032 (2004-12-01), None

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