Method of forming a metal-insulator-metal capacitor

Details Method of forming a metal-insulator-metal capacitor Method of forming a metal-insulator-metal capacitor

2006-03-28

2006-03-28

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S239000, C438S240000, C438S243000, C438S761000, C438S795000, C257S301000

Reexamination Certificate

active

07018933

ABSTRACT:
A metal-insulator-metal (MIM) capacitor of a semiconductor device, and a manufacturing method thereof, includes a lower electrode formed of a refractory metal or a conductive compound including the refractory metal, a dielectric film formed of a high dielectric material, and an upper electrode formed of a platinum-family metal or a platinum-family metal oxide. Accordingly, the MIM capacitor satisfies the criteria of step coverage, electrical characteristics and manufacturing costs, as compared to a conventional MIM capacitor in which the upper and lower electrodes are formed of the same material such as a platinum-family metal, a refractory metal or a conductive compound including the refractory metal. The capacitor is especially suitable for mass production in semiconductor fabrication processes.

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