Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2006-07-04
2006-07-04
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
Reexamination Certificate
active
07071086
ABSTRACT:
A method for forming a semiconductor structure having a metal gate with a controlled work function includes the step of forming a precursor having a substrate with active regions separated by a channel, a temporary gate over the channel and within a dielectric layer. The temporary gate is removed to form a recess with a bottom and sidewalls in the dielectric layer. A non-silicon containing metal layer is deposited in the recess. Silicon is incorporated into the metal layer and a metal is deposited on the metal layer. The incorporation of the silicon is achieved by silane treatments that are performed before, after or both before and after the depositing of the metal layer. The amount of silicon incorporated into the metal layer controls the work function of the metal gate that is formed.
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Besser Paul
Ngo Minh van
Pan James
Woo Christy
Yin Jinsong
Advanced Micro Devices , Inc.
Booth Richard A.
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