Method of forming a metal contact on a projection on a semicondu

Details Method of forming a metal contact on a projection on a semicondu Method of forming a metal contact on a projection on a semicondu

1994-03-01

1995-01-31

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156660, 156634, 156652, H01L 21312

Patent

active

053856368

ABSTRACT:
A metal contact is formed by etching a metal film that is locally protected by a spot of photosensitive resin. Thereafter the resin is caused to flow in the presence of vapor of a solvent for the resin, so as to form a protective spot of increased size. This larger spot makes it possible to etch the semiconductor substrate while ensuring that the projection formed in this way is automatically aligned relative to the metal contact. The resin remains photosensitive, thereby enabling subsequent etching. The invention is particularly applicable to the manufacture of avalanche diodes.

REFERENCES:
patent: 3721592 (1973-03-01), De Werdt
patent: 4680085 (1987-07-01), Vijan
patent: 4788159 (1988-11-01), Smith
patent: 5084409 (1992-01-01), Beam
patent: 5283209 (1994-02-01), Poingt et al.

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