Method of forming a mesa in a semiconductor device with subseque

Details Method of forming a mesa in a semiconductor device with subseque Method of forming a mesa in a semiconductor device with subseque

1980-10-29

1982-10-26

Rutledge, L. Dewayne

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29580, 29413, 29414, 156644, 156645, 156649, 225 2, 225 965, H01L 2178

Patent

active

043554571

ABSTRACT:
A method of forming a mesa in a semiconductor device comprises forming a plurality of such devices on a wafer, mechanically cutting relatively wide channels to a predetermined depth in said wafer at positions around individual ones of the devices to partially separate the devices from each other. The mechanical cutting technique defines mesa walls and plain surfaces between individual devices. These channels are then etched to repair scars caused by the cutting technique and, thereafter, the wafer is broken along the center line of the channels to separate the devices from each other.

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Garcia, J. R., "Electrical Isolation of Semiconductor Chip Edges", I.B.M. Tech. Discl. Bull., vol. 8, No. 5, Oct. 1965, p. 800-801.

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