Method of forming a MEMS topped integrated circuit with a...

Details Method of forming a MEMS topped integrated circuit with a... Method of forming a MEMS topped integrated circuit with a...

2010-03-30

2011-11-01

Bryant, Kiesha (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

C438S003000, C438S064000, C257S421000

Reexamination Certificate

active

08048704

ABSTRACT:
The bow in a wafer that results from fabricating a large number of MEMS devices on the top surface of the passivation layer of the wafer so that a MEMS device is formed over each die region is reduced by forming a stress relief layer between the passivation layer and the MEMS devices.

REFERENCES:
patent: 3881244 (1975-05-01), Kendall
patent: 4342143 (1982-08-01), Jennings
patent: 5548265 (1996-08-01), Saito
patent: 6008102 (1999-12-01), Alford et al.
patent: 6025767 (2000-02-01), Kellam et al.
patent: 6573818 (2003-06-01), Klemmer et al.
patent: 6781239 (2004-08-01), Yegnashankaran et al.
patent: 6809436 (2004-10-01), Chang et al.
patent: 6903938 (2005-06-01), Waffenschmidt
patent: 7012327 (2006-03-01), Huff et al.
patent: 7041526 (2006-05-01), Shim et al.
patent: 7098070 (2006-08-01), Chen et al.
patent: 7144750 (2006-12-01), Ouellet et al.
patent: 7170141 (2007-01-01), Kornegay et al.
patent: 7250841 (2007-07-01), Hopper et al.
patent: 7250842 (2007-07-01), Johnson et al.
patent: 7253488 (2007-08-01), Zhan et al.
patent: 7268410 (2007-09-01), Hopper et al.
patent: 7396740 (2008-07-01), Bakke et al.
patent: 7402449 (2008-07-01), Fukuda et al.
patent: 7491595 (2009-02-01), Huang et al.
patent: 7514760 (2009-04-01), Quevy
patent: 7564319 (2009-07-01), Ding et al.
patent: 7584533 (2009-09-01), Smeys et al.
patent: 7791440 (2010-09-01), Ramadan et al.
patent: 7875524 (2011-01-01), Kim
patent: 7875955 (2011-01-01), Hopper et al.
patent: 7915991 (2011-03-01), Waffenschmidt et al.
patent: 2004/0027218 (2004-02-01), Stafford et al.
patent: 2005/0094302 (2005-05-01), Matsuzaki et al.
patent: 2005/0109081 (2005-05-01), Zribi et al.
patent: 2006/0063351 (2006-03-01), Jain
patent: 2006/0131163 (2006-06-01), Mei et al.
patent: 2006/0246631 (2006-11-01), Lutz et al.
patent: 2007/0205855 (2007-09-01), Hashimoto
patent: 2007/0245553 (2007-10-01), Chong et al.
patent: 2007/0287233 (2007-12-01), Zhan et al.
patent: 2009/0091414 (2009-04-01), Hopper et al.
patent: 2009/0256667 (2009-10-01), Smeys et al.
“Photodefinable Spin-On Silicone Overview—Dow Corning”, [online], [retrieved on Mar. 4, 2008]. Retrieve from the Internet: http://www.dowcorning.com/content/etronics/etronicspattern/etronicspattern—photoov.asp.
“Ultra-Compact Power Conversion Based on a CMOS-Compatible Microfabricated Power Inductor with Minimized Core Losses”, Preston Galle, et al., 2007 Electronic Components and Technology Conference, May 29, 2007-Jun. 1, 2007, pp. 1889-1894.
U.S. Appl. No. 12/082,209 to Peter Smeys et al filed Apr. 9, 2008.

Affiliated with

Also associated with

Rating

Method of forming a MEMS topped integrated circuit with a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a MEMS topped integrated circuit with a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a MEMS topped integrated circuit with a... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4289583